vishay semiconductors TLMA3100 document number 83033 rev. 1.6, 12-sep-07 www.vishay.com 1 low current smd led plcc-2 features ? smd led with exceptional brightness ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with infrared, vapor phase and wave solder processes according to cecc ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? very low power consumption ? luminous intensity ratio in one packaging unit i vmax /i vmin 2.0 ? lead (pb)-free device 19225 e3 description these new devices have been designed to meet the increasing demand for low current smd leds. the package of the TLMA3100 is the plcc-2 (equivalent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: low current ? angle of half intensity: 60 applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight for battery driven equipment ? small indicator for outdoor applications ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use parts table part color, luminous intensity technology TLMA3100 yellow, i v > 0.25 mcd gaasp on gap
www.vishay.com 2 document number 83033 rev. 1.6, 12-sep-07 vishay semiconductors TLMA3100 note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 typical characteristics t amb = 25 c, unless otherwise specified absolute maximum ratings 1) TLMA3100 parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 7ma surge forward current t p 10 si fsm 0.5 a power dissipation t amb 90 c p v 20 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 500 k/w optical and electrical characteristics 1) TLMA3100, yellow parameter test condition symbol min typ. max unit luminous intensity 2) i f = 2 ma i v 0.25 2.5 mcd dominant wavelength i f = 2 ma d 581 594 nm peak wavelength i f = 2 ma p 585 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 2.2 2.9 v reverse voltage i r = 10 av r 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature 0 5 10 15 20 25 p v - po w er dissipation (m w ) t am b - am b ient temperat u re (c) 95 10 8 41 100 8 0 60 40 20 0 figure 2. forward current vs. ambient temperature 0 2 4 6 8 10 i f - for w ard c u rrent (ma) 95 10 8 42 100 8 0 60 40 20 0 t am b - am b ient temperat u re (c)
document number 83033 rev. 1.6, 12-sep-07 www.vishay.com 3 vishay semiconductors TLMA3100 figure 3. rel. luminous intensity vs. angular displacement figure 4. forward current vs. forward voltage rel. luminous intensity vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 01 0.1 1 10 100 v f - for w ard v oltage ( v ) 5 95 10053 i f - for w ard c u rrent (ma) yello w t p /t = 0.001 t p = 10 s 23 4 0 0.4 0. 8 1.2 1.6 2.0 i v rel - relati v e l u mino u s intensity yello w t am b - am b ient temperat u re (c) 95 10054 0204060 8 0 100 figure 5. rel. lumin. intensity vs. forw. current/duty cycle figure 6. relative luminous intensity vs. forward current figure 7. relative intensity vs. wavelength yello w 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 96 10264 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i v rel - relati v e l u mino u s intensity 2.0 yello w 0.01 0.1 1 10 100 95 10062 i f - for w ard c u rrent (ma) i v rel - relati v e l u mino u s intensity 100 10 1 0.1 550 570 590 610 630 0 0.2 0.4 0.6 0. 8 1.2 650 95 10039 - w a v elength (nm) 1.0 yello w i v rel - relati v e l u mino u s intensity
www.vishay.com 4 document number 83033 rev. 1.6, 12-sep-07 vishay semiconductors TLMA3100 package dimensions in millimeters 95 11314-1 mounting pad layout 3.5 0.2 0.9 1.75 0.10 pin identification 2. 8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5025.01-4 iss u e: 8 ; 22.11.05 ca
document number 83033 rev. 1.6, 12-sep-07 www.vishay.com 5 vishay semiconductors TLMA3100 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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